Niobium Silicide NbSi2 powder Price

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Feature of Niobium Silicide

Item	other name	CAS	EINECS	molecular weight	melting point
NbSi2	Niobium silicide; Niobium disilicide	12034-80-9	234-812-3	149.0774	1940℃

Product specification of Niobium Silicide powder Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm. Micro grade(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um. The parameters of NiSi2 are as follows: Chemical composition: Si: 4.3%，Mg:0.1%, the rest is Ni Density: 8.585g/cm3 Resistance: 0.365 Q mm2 / M Resistance temperature coefficient(20-100 ° C)689x10 minus 6th power / KCoefficient of thermal expansion (20-100° C)17x10 minus 6th power / K Thermal conductivity (100° C)27xwm negative first power K negative first powerMelting point: 1309 °c Application fields: Silicon is the most widely used semiconductor materials. A variety of metal silicides have beenstudied for contact and interconnection technology of semiconductor devices.MoSi2, WSl andNi2Si have been introduced into the development of microelectronic devices.These silicon-basedthin films have good matching with silicon materials, and can be used for insulation, isolation,passivation and interconnection in silicon devices,NiSi, as the most promising self-aligned silicidematerial for nanoscale devices, has been widely studied for its low silicon loss and low formationheat budget, low resistivity and no linewidth effect In graphene electrode, nickel silicide can delaythe occurrence of pulverization and cracking of silicon electrode, and improve the conductivity ofthe electrode.The wetting and spreading effects of nisi2 alloy on SiC ceramics at different temperatures and atmospheres were investigated.

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